The Glow Research ST1200 Plasma System delivers high end RIE anisotropic etching of silicon nitride (Si3N4), silicon oxide (SiO2), silicide, III-V compounds, polyimide and photo resist removal. The ST1200 can provide a wide variety of etch profiles ranging from anisotropic to sloped walls. The system has diagnostic software to test vacuum and process gas components prior to processing ensuring repeatable results from system to system…as well as from sample to sample.
- The ST1200 chamber is a two piece clam-shell type. The material to be etched is placed on the powered bottom electrode. Designed to ensure anisotropic etching and maximize selectivity, uniformity, and speed.
- The upper and lower process chamber are machined out of single blocks of high grade aluminum to ensure vacuum integrity.
- Process gas showerhead is designed for laminar flow of process gas over the entire etching area.
- Annular gas exit through the bottom/center throat of the lower chamber–to ensure equal and proper gas flow without turbulence (improved uniformity and less particles).
- The size ratio of the small powered electrode to the larger ground electrode produces a negative DC bias which enhances ion bombardment and anisotropy.
- A dark space shield focuses the plasma on the bottom electrode, thus optimizing power utilization.
- The bottom electrode is water cooled to maintain the sample at a low temperature during processing.
- 10” (254mm) diameter process chamber–can process 8” (200mm) or smaller wafers or substrates.
- Variable electrode spacing
- Chamber is equipped with a treated quartz viewing window for observation of the plasma process.
- Standard four (4) digital mass flow controllers
- Baratron pressure readback
- Throttle valve for controlling chamber pressure independent of chamber pressure
- Nitrogen chamber purge—for particle reduction and sample integrity
- Soft gas introduction and soft vent/purge to reduce particles and protect substrate(s)
- 600 watt, 13.56MHz RF power
- Production Automatic RF matching network with advanced system grounding
- Automatic optical end point control
- DC bias readout
Software (KTS Genesis):
- Touchscreen control
- System preprocess self-check (MFC’s, baratron, pressure, etc.)
- Multiple step recipes—easy to configure
- Adjustable gas stabilization times
- Data logging
- Store/download historical records
- Access passwords for process, equipment engineering, and operator
- Stable Linux based OS and KTS Genesis application software
- USB flash memory permits recipes to be used in multiple ST1200 systems
Options:
- 200 or 400 l/sec turbo pump with isolation valve (sits directly under the chamber)
- 1,200 watt, or 3,000 watt generator
- 45 cfm vacuum pump
- Laser or mass spectrometer end point control
- Inductively coupled Plasma (ICP) for faster and more sophisticated applications requiring more reactive species
- Heated chuck, Stainless steel or anodized aluminum chamber
- Dual generator configuration
- Lid lift assist
Specifications:
- Gases: SF6, CF4, He, O2
- Etch Rate is 2,000 Angstroms/min for Si3N4 and 1,500 Angstroms/min for SiO2
- Uniformity:
- 100mm : ± 3% (max-min/(2)average)
- 150mm : ± 5% (max-min/(2)average
Applications:
- Contact Slope Etch
- Via Etch
- BPSG Etch
- TEOS Etch
- Thermal Oxide Etch
- LTO Etch
- Thermal Oxide Etch
- LPCVD Nitride Etch
- PECVD Nitride Etch
- Descum
- Planarization
- Photo Resist Strip (with heater)
- Low Temperature Photo Resist Ashing over Oxides, Poly, Al, W, Ti or Moly
- Trench Rounding
- Backside Poly, Nitride, Oxide
- Nitride Pattern Removal
Facilities:
- Plumbed Gases…O2, CF4, He, SF6
- Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps
- Cooling: Dowfrost or equivalent
