Priced under $55K with factory install support and 12 month warranty
The Glow Research ST1200 Ion etching system delivers high end RIE anisotropic etching of silicon nitride (Si3N4), silicon oxide (SiO2), silicide, III-V compounds, polyimide and photo resist removal. The ST1200 can provide a wide variety of etch profiles ranging from anisotropic to sloped walls. The system has diagnostic software to test vacuum and process gas components prior to processing–ensuring repeatable results from system to system, and from sample to sample. Here is a short list of system features.
- Process gas showerhead is designed for laminar flow of process gas over the entire etching area.
- The size ratio of the small powered electrode to the larger ground electrode produces a negative DC bias which enhances ion bombardment and anisotropy.
- A dark space shield focuses the plasma on the bottom electrode, thus optimizing power utilization.
- The bottom electrode is water cooled to maintain the sample at a low temperature during processing.
- 10” (254mm) diameter process chamber–can process 8” (200mm) or smaller wafers or substrates.
- Variable electrode spacing
- Digital mass flow controllers
- Baratron pressure readback
- Throttle valve for controlling chamber pressure independent of chamber pressure
- Nitrogen chamber purge—for particle reduction and sample integrity
- Soft gas introduction and soft vent/purge to reduce particles and protect substrate(s)
- 600 watt, 13.56MHz RF power (options for 1,200 or 3,000 w)
- Production Automatic RF matching network with advanced system grounding
- Automatic optical end point control
- DC bias readout
Software:
- Touchscreen control
- System preprocess self-check (MFC’s, baratron, pressure, etc.)
- Multiple step recipes—easy to configure
- Adjustable gas stabilization times, confirm MFC linearity
- Data logging, store/download historical records
- Monitor RF on/off times during process, pressure curves during process
Options:
- 200 or 400 l/sec turbo pump with isolation valve (sits directly under the chamber)
- 1,200 watt, or 3,000 watt generator
- Laser or mass spectrometer end point control
- Inductively coupled Plasma (ICP) for faster and more sophisticated applications requiring more reactive species
- Heated chuck, Stainless steel or anodized aluminum chamber
- Contact Slope Etch
- Via Etch
- BPSG Etch
- TEOS Etch
- Thermal Oxide Etch
- LTO Etch
- Thermal Oxide Etch
- LPCVD Nitride Etch
- PECVD Nitride Etch
- Descum
- Planarization
- Photo Resist Strip (with heater)
- Low Temperature Photo Resist Ashing over Oxides, Poly, Al, W, Ti or Moly
- Trench Rounding
- Backside Poly, Nitride, Oxide
- Nitride Pattern Removal
