This work was done at the Weizmann Institute of Science in Rehovot, Israel in a quartz chamber AutoGlow plasma system:
2.1. Thin film preparation
Si (100) substrates (1 cm _ 1 cm samples) were sonicated
in ethyl acetate for 5 min, and then processed in an
oxygen plasma sysem (AutoGlow, GlowResearch, USA) for
3 min at 100 W.
O2 and organic semiconductors: Electronic effects
Pabitra K. Nayak ⇑, Ron Rosenberg, Lee Barnea-Nehoshtan, David Cahen
Dept. Materials & Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
Contact potential difference (CPD) measurements of the relative work functions of a range
of organic semiconductor thin films show that oxygen causes effective p-type doping (with
work functions increasing 0.1–0.3 eV).
